Antenna in embedded wafer-level ball-grid array package

ABSTRACT

A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die. A first conductive layer is formed with an antenna over a first surface of the encapsulant. A second conductive layer is formed with a ground plane over a second surface of the encapsulant with the antenna located within a footprint of the ground plane. A conductive bump is formed on the ground plane. A third conductive layer is formed over the first surface of the encapsulant. A fourth conductive layer is formed over the second surface of the encapsulant. A conductive via is disposed adjacent to the semiconductor die prior to depositing the encapsulant. The antenna is coupled to the semiconductor die through the conductive via. The antenna is formed with the conductive via between the antenna and semiconductor die. A PCB unit is disposed in the encapsulant.

CLAIM OF DOMESTIC PRIORITY

The present application is a continuation of U.S. patent applicationSer. No. 15/219,098, now U.S. Pat. No. 9,806,040, filed Jul. 25, 2016,which claims the benefit of U.S. Provisional Application No. 62/198,522,filed Jul. 29, 2015, which application are incorporated herein byreference.

FIELD OF THE INVENTION

The present invention relates in general to semiconductor devices and,more particularly, to a semiconductor device including an antenna in anembedded wafer-level ball-grid array (eWLB) package and a method offorming the same.

BACKGROUND OF THE INVENTION

Semiconductor devices are commonly found in modern electronic products.Semiconductor devices vary in the number and density of electricalcomponents. Discrete semiconductor devices generally contain one type ofelectrical component, e.g., light emitting diode (LED), small signaltransistor, resistor, capacitor, inductor, and powermetal-oxide-semiconductor field-effect transistor (MOSFET). Integratedsemiconductor devices typically contain hundreds to millions ofelectrical components. Examples of integrated semiconductor devicesinclude microcontrollers, microprocessors, and various signal processingcircuits.

Semiconductor devices perform a wide range of functions such as signalprocessing, high-speed calculations, transmitting and receivingelectromagnetic signals, controlling electronic devices, transformingsunlight to electricity, and creating visual images for televisiondisplays. Semiconductor devices are found in the fields ofentertainment, communications, power conversion, networks, computers,and consumer products. Semiconductor devices are also found in militaryapplications, aviation, automotive, industrial controllers, and officeequipment.

Semiconductor devices exploit the electrical properties of semiconductormaterials. The structure of semiconductor material allows the material'selectrical conductivity to be manipulated by the application of anelectric field or base current or through the process of doping. Dopingintroduces impurities into the semiconductor material to manipulate andcontrol the conductivity of the semiconductor device.

A semiconductor device contains active and passive electricalstructures. Active structures, including bipolar and field effecttransistors, control the flow of electrical current. By varying levelsof doping and application of an electric field or base current, thetransistor either promotes or restricts the flow of electrical current.Passive structures, including resistors, capacitors, and inductors,create a relationship between voltage and current necessary to perform avariety of electrical functions. The passive and active structures areelectrically connected to form circuits, which enable the semiconductordevice to perform high-speed operations and other useful functions.

Semiconductor devices are generally manufactured using two complexmanufacturing processes, i.e., front-end manufacturing and back-endmanufacturing, each involving potentially hundreds of steps. Front-endmanufacturing involves the formation of a plurality of die on thesurface of a semiconductor wafer. Each semiconductor die is typicallyidentical and contains circuits formed by electrically connecting activeand passive components. Back-end manufacturing involves singulatingindividual semiconductor die from the finished wafer and packaging thedie to provide structural support, electrical interconnect, andenvironmental isolation. The term “semiconductor die” as used hereinrefers to both the singular and plural form of the words, andaccordingly, can refer to both a single semiconductor device andmultiple semiconductor devices.

One goal of semiconductor manufacturing is to produce smallersemiconductor devices. Smaller devices typically consume less power,have higher performance, and can be produced more efficiently. Inaddition, smaller semiconductor devices have a smaller footprint, whichis desirable for smaller end products. A smaller semiconductor die sizecan be achieved by improvements in the front-end process resulting insemiconductor die with smaller, higher density active and passivecomponents. Back-end processes may result in semiconductor devicepackages with a smaller footprint by improvements in electricalinterconnection and packaging materials.

Another goal of semiconductor manufacturing is to integrate additionalfeatures into a semiconductor package. Integrating features into asemiconductor package reduces cost and complexity of manufacturing thefinal electronic device. One growing use for semiconductor devices is asradar sensors in the automotive field for detecting nearby vehicles andother obstacles. Radar is finding increased importance in the growingfield of self-driving vehicles. An electronic device on a vehicle emitselectromagnetic radiation to illuminate nearby objects, and thenobserves the reflected radiation to determine the relative position andspeed of the nearby objects. Emitting and observing reflected radiationis done by one or more antennae located on the vehicle. The antennae areformed on a printed circuit board (PCB) near a semiconductor packagecontaining a monolithic microwave integrated circuit (MMIC) or otherradar integrated circuit. A manufacturer of the radar system must designand implement proper antenna and shielding on a PCB. The antenna andgrounding on the PCB increases manufacturing cost and complexity.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a printed circuit board (PCB) with different types ofpackages mounted to a surface of the PCB;

FIGS. 2a-2d illustrate a semiconductor wafer with a plurality ofsemiconductor die separated by a saw street;

FIGS. 3a-3j illustrate a method of forming a radar transceiver packagewith a self-defined antenna and a semiconductor die;

FIG. 4 illustrates the radar transceiver package;

FIG. 5 illustrates a first alternative embodiment of the radartransceiver package;

FIGS. 6a-6c illustrate a second alternative embodiment of the radartransceiver package;

FIG. 7 illustrates a third alternative embodiment of the radartransceiver package; and

FIGS. 8a-8i illustrate forming a backside redistribution layer on adummy die.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is described in one or more embodiments in thefollowing description with reference to the figures, in which likenumerals represent the same or similar elements. While the invention isdescribed in terms of the best mode for achieving objectives of theinvention, those skilled in the art will appreciate that the disclosureis intended to cover alternatives, modifications, and equivalents as maybe included within the spirit and scope of the invention as defined bythe appended claims and claims equivalents as supported by the followingdisclosure and drawings.

Semiconductor devices are generally manufactured using two complexmanufacturing processes: front-end manufacturing and back-endmanufacturing. Front-end manufacturing involves the formation of aplurality of die on the surface of a semiconductor wafer. Each die onthe wafer contains active and passive electrical components, which areelectrically connected to form functional electrical circuits. Activeelectrical components, such as transistors and diodes, have the abilityto control the flow of electrical current. Passive electricalcomponents, such as capacitors, inductors, and resistors, create arelationship between voltage and current necessary to perform electricalcircuit functions.

Passive and active components are formed over the surface of thesemiconductor wafer by a series of process steps including doping,deposition, photolithography, etching, and planarization. Dopingintroduces impurities into the semiconductor material by techniques suchas ion implantation or thermal diffusion. The doping process modifiesthe electrical conductivity of semiconductor material in active devicesby dynamically changing the semiconductor material conductivity inresponse to an electric field or base current. Transistors containregions of varying types and degrees of doping arranged as necessary toenable the transistor to promote or restrict the flow of electricalcurrent upon the application of the electric field or base current.

Active and passive components are formed by layers of materials withdifferent electrical properties. The layers can be formed by a varietyof deposition techniques determined in part by the type of materialbeing deposited. For example, thin film deposition can involve chemicalvapor deposition (CVD), physical vapor deposition (PVD), electrolyticplating, and electroless plating processes. Each layer is generallypatterned to form portions of active components, passive components, orelectrical connections between components.

Back-end manufacturing refers to cutting or singulating the finishedwafer into the individual semiconductor die and packaging thesemiconductor die for structural support, electrical interconnect, andenvironmental isolation. To singulate the semiconductor die, the waferis scored and broken along non-functional regions of the wafer calledsaw streets or scribes. The wafer is singulated using a laser cuttingtool or saw blade. After singulation, the individual semiconductor dieare mounted to a package substrate that includes pins or contact padsfor interconnection with other system components. Contact pads formedover the semiconductor die are then connected to contact pads within thepackage. The electrical connections can be made with conductive layers,bumps, stud bumps, conductive paste, or wirebonds. An encapsulant orother molding material is deposited over the package to provide physicalsupport and electrical isolation. The finished package is then insertedinto an electrical system and the functionality of the semiconductordevice is made available to the other system components.

FIG. 1 illustrates electronic device 50 having a chip carrier substrateor PCB 52 with a plurality of semiconductor packages mounted on asurface of PCB 52. Electronic device 50 can have one type ofsemiconductor package, or multiple types of semiconductor packages,depending on the application. The different types of semiconductorpackages are shown in FIG. 1 for purposes of illustration.

Electronic device 50 can be a stand-alone system that uses thesemiconductor packages to perform one or more electrical functions.Alternatively, electronic device 50 can be a subcomponent of a largersystem. For example, electronic device 50 can be part of a tablet,cellular phone, digital camera, or other electronic device.Alternatively, electronic device 50 can be a graphics card, networkinterface card, or other signal processing card that can be insertedinto a computer. The semiconductor package can include microprocessors,memories, application specific integrated circuits (ASIC),microelectromechanical systems (MEMS), logic circuits, analog circuits,RF circuits, discrete devices, or other semiconductor die or electricalcomponents. Miniaturization and weight reduction are essential for theproducts to be accepted by the market. The distance betweensemiconductor devices may be decreased to achieve higher density.

In FIG. 1, PCB 52 provides a general substrate for structural supportand electrical interconnect of the semiconductor packages mounted on thePCB. Conductive signal traces 54 are formed over a surface or withinlayers of PCB 52 using evaporation, electrolytic plating, electrolessplating, screen printing, or other suitable metal deposition process.Signal traces 54 provide for electrical communication between each ofthe semiconductor packages, mounted components, and other externalsystem components. Traces 54 also provide power and ground connectionsto each of the semiconductor packages.

In some embodiments, a semiconductor device has two packaging levels.First level packaging is a technique for mechanically and electricallyattaching the semiconductor die to an intermediate substrate. Secondlevel packaging involves mechanically and electrically attaching theintermediate substrate to the PCB. In other embodiments, a semiconductordevice may only have the first level packaging where the die ismechanically and electrically mounted directly to the PCB.

For the purpose of illustration, several types of first level packaging,including bond wire package 56 and flipchip 58, are shown on PCB 52.Additionally, several types of second level packaging, including ballgrid array (BGA) 60, bump chip carrier (BCC) 62, land grid array (LGA)66, multi-chip module (MCM) 68, quad flat non-leaded package (QFN) 70,quad flat package 72, embedded wafer level ball grid array (eWLB) 74,and wafer level chip scale package (WLCSP) 76 are shown mounted on PCB52. In one embodiment, eWLB 74 is a fan-out wafer level package (Fo-WLP)and WLCSP 76 is a fan-in wafer level package (Fi-WLP). Depending uponthe system requirements, any combination of semiconductor packages,configured with any combination of first and second level packagingstyles, as well as other electronic components, can be connected to PCB52. In some embodiments, electronic device 50 includes a single attachedsemiconductor package, while other embodiments call for multipleinterconnected packages. By combining one or more semiconductor packagesover a single substrate, manufacturers can incorporate pre-madecomponents into electronic devices and systems. Because thesemiconductor packages include sophisticated functionality, electronicdevices can be manufactured using less expensive components and astreamlined manufacturing process. The resulting devices are less likelyto fail and less expensive to manufacture resulting in a lower cost forconsumers.

FIG. 2a shows a semiconductor wafer 120 with a base substrate material122, such as silicon, germanium, aluminum phosphide, aluminum arsenide,gallium arsenide, gallium nitride, indium phosphide, silicon carbide, orother bulk semiconductor material for structural support. A plurality ofsemiconductor die or components 124 is formed on wafer 120 separated bya non-active, inter-die wafer area or saw street 126 as described above.Saw street 126 provides cutting areas to singulate semiconductor wafer120 into individual semiconductor die 124. In one embodiment,semiconductor wafer 120 has a width or diameter of 100-450 millimeters(mm).

FIG. 2b shows a cross-sectional view of a portion of semiconductor wafer120. Each semiconductor die 124 has a back or non-active surface 128 andan active surface 130 containing analog or digital circuits implementedas active devices, passive devices, conductive layers, and dielectriclayers formed within the die and electrically interconnected accordingto the electrical design and function of the die. For example, thecircuit may include one or more transistors, diodes, and other circuitelements formed within active surface 130 to implement analog circuitsor digital circuits, such as digital signal processor (DSP), ASIC, MEMS,memory, or other signal processing circuit. Semiconductor die 124 mayalso contain integrated passive devices (IPDs), such as inductors,capacitors, and resistors, for RF signal processing. In one embodiment,active surface 130 includes active and passive circuitry as required toform an MMIC or other radar transceiver circuit. Back surface 128 ofsemiconductor wafer 120 may undergo an optional backgrinding operationwith a mechanical grinding or etching process to remove a portion ofbase material 122 and reduce the thickness of semiconductor wafer 120and semiconductor die 124.

An electrically conductive layer 132 is formed over active surface 130using PVD, CVD, electrolytic plating, electroless plating process, orother suitable metal deposition process. Conductive layers 132 includeone or more layers of aluminum (Al), copper (Cu), tin (Sn), nickel (Ni),gold (Au), silver (Ag), or other suitable electrically conductivematerial. Conductive layer 132 operates as contact pads electricallyconnected to the circuits on active surface 130. Conductive layer 132can be formed as contact pads disposed side-by-side a first distancefrom the edge of semiconductor die 124, as shown in FIG. 2b .Alternatively, conductive layer 132 can be formed as contact pads thatare offset in multiple rows such that a first row of contact pads isdisposed a first distance from the edge of the die, and a second row ofcontact pads alternating with the first row disposed a second distancefrom the edge of the die.

Semiconductor wafer 120 undergoes electrical testing and inspection aspart of a quality control process. Manual visual inspection andautomated optical systems are used to perform inspections onsemiconductor wafer 120. Software can be used in the automated opticalanalysis of semiconductor wafer 120. Visual inspection methods mayemploy equipment such as a scanning electron microscope, high-intensityor ultra-violet light, or metallurgical microscope. Semiconductor wafer120 is inspected for structural characteristics including warpage,thickness variation, surface particulates, irregularities, cracks,delamination, and discoloration.

The active and passive components within semiconductor die 124 undergotesting at the wafer level for electrical performance and circuitfunction. Each semiconductor die 124 is tested for functionality andelectrical parameters, as shown in FIG. 2c , using a test probe head 136including a plurality of probes or test leads 138, or other testingdevice. Probes 138 are used to make electrical contact with nodes orconductive layer 132 on each semiconductor die 124 and provideelectrical stimuli to contact pads 132. Semiconductor die 124 respondsto the electrical stimuli, which is measured by computer test system 140and compared to an expected response to test functionality of thesemiconductor die. The electrical tests may include circuitfunctionality, lead integrity, resistivity, continuity, reliability,junction depth, ESD, RF performance, drive current, threshold current,leakage current, and operational parameters specific to the componenttype. The inspection and electrical testing of semiconductor wafer 120enables semiconductor die 124 that pass to be designated as known gooddie (KGD) for use in a semiconductor package.

In FIG. 2d , semiconductor wafer 120 is singulated through saw street126 using a saw blade or laser cutting tool 142 into individualsemiconductor die 124. The individual semiconductor die 124 can beinspected and electrically tested for identification of KGDpost-singulation.

FIG. 3a shows a cross-sectional view of a portion of a carrier ortemporary substrate 160 containing sacrificial base material such assilicon, polymer, beryllium oxide, glass, or other suitable low-cost,rigid material for structural support. An interface layer ordouble-sided tape 162 is formed over carrier 160 as a temporary adhesivebonding film, etch-stop layer, or thermal release layer.

Carrier 160 can be a round or rectangular panel (greater than 300 mm)with capacity for multiple semiconductor die 124. Carrier 160 may have alarger surface area than the surface area of semiconductor wafer 120. Alarger carrier reduces the manufacturing cost of the semiconductorpackage as more semiconductor die can be processed on the larger carrierthereby reducing the cost per unit. Semiconductor packaging andprocessing equipment are designed and configured for the size of thewafer or carrier being processed.

To further reduce manufacturing costs, the size of carrier 160 isselected independent of the sizes of semiconductor die 124 andsemiconductor wafer 120. That is, carrier 160 has a fixed orstandardized size, which can accommodate various size semiconductor die124 singulated from one or more semiconductor wafers 120. In oneembodiment, carrier 160 is circular with a diameter of 206 mm. Inanother embodiment, carrier 160 is rectangular with a width of 560 mmand length of 600 mm. Semiconductor die 124 may have dimensions of 5 mmby 5 mm, which are placed on the standardized carrier 160.Alternatively, semiconductor die 124 may have dimensions of 10 mm by 10mm, which are placed on the same standardized carrier 160. Accordingly,standardized carrier 160 can handle any size semiconductor die 124,which allows subsequent semiconductor processing equipment to bestandardized to a common carrier, i.e., independent of die size orincoming wafer size. Semiconductor packaging equipment can be designedand configured for a standard carrier using a common set of processingtools, equipment, and bill of materials to process any semiconductor diesize from any incoming wafer size. The common or standardized carrier160 lowers manufacturing costs and capital risk by reducing oreliminating the need for specialized semiconductor processing linesbased on die size or incoming wafer size. By selecting a predeterminedcarrier size to use for any size semiconductor die from allsemiconductor wafers, a flexible manufacturing line can be implemented.

Semiconductor die 124 from FIG. 2d are mounted onto carrier 160 andinterface layer 162 using, for example, a pick and place operation withactive surface 130 of semiconductor die 124 oriented toward the carrier.While a single semiconductor die 124 is illustrated in FIG. 3a , carrier160 generally has more semiconductor die mounted on the carrier that arenot illustrated. Sufficient space is left between adjacent semiconductordie 124 when mounting the semiconductor die on carrier 160 to allow aplurality of PCB or eBAR units 170 to be disposed on the carrier betweenthe semiconductor die.

PCB units 170 begin with a core substrate 172. Core substrate 172includes one or more laminated layers of polytetrafluoroethylenepre-impregnated (prepreg), FR-4, FR-1, CEM-1, or CEM-3 with acombination of phenolic cotton paper, epoxy, resin, woven glass, matteglass, polyester, and other reinforcement fibers or fabrics. In oneembodiment, core substrate 172 is a composite with woven fiber andfiller. In another embodiment, core substrate 172 is formed from anencapsulant or molding compound. Alternatively, core substrate 172includes one or more insulating or passivation layers.

A plurality of through-vias is formed through core substrate 172 usinglaser drilling, mechanical drilling, or deep reactive ion etching(DRIE). The vias extend completely through core substrate 172. The viasare filled with Al, Cu, Sn, Ni, Au, Ag, titanium (Ti), tungsten(W), orother suitable electrically conductive material using electrolyticplating, electroless plating, or other suitable deposition process toform z-direction vertical interconnect conductive vias or plated throughholes (PTHs) 174. In some embodiments where core substrate 172 is amolding compound, the molding compound is deposited around vias 174 thatare pre-formed as conductive pillars.

Alternatively, a conductive layer is formed over the sidewalls of thethrough-vias using PVD, CVD, electrolytic plating, electroless plating,or other suitable metal deposition process, and a center portion of thethrough-vias is filled with a conductive filler material, e.g., Cupaste, or an insulating filler material, e.g., a polymer plug. In someembodiments, contact pads and a passivation layer are formed on the topand bottom surfaces of PCB units 170. PCB units 170 include a centralarea reserved as saw streets 176. Saw streets 176 are subsequently cutthrough when singulating semiconductor die 124, with the conductive vias174 on each side of saw street 176 being packaged with an associatedsemiconductor die 124.

FIG. 3b illustrates a plan view of an area of carrier 160 showing foursemiconductor die 124. Active surfaces 130 of semiconductor die 124 areoriented toward carrier 160, and back surfaces 128 are oriented towardthe viewer in FIG. 3b . Each semiconductor die 124 is flanked by two PCBunits 170, as shown in FIG. 3a . The view of FIG. 3b also reveals PCBunits 179, which are not visible in the cross-section of FIG. 3a . PCBunits 179 are similar to PCB units 170, but are formed or singulated toa different length and width and include a different configuration ofconductive vias 174. Each PCB unit 179 includes a group of conductivevias 180 associated with a first semiconductor die 124 and a group ofconductive vias 182 associated with a second semiconductor die 124. Aregion 188 of each PCB unit 179 remains reserved as a location where aradar antenna will subsequently be formed. In some embodiments, a radarantenna and ground layer are formed over opposite sides of PCB unit 179prior to disposing PCB unit 179 on carrier 160. In the illustratedembodiment, group 182 of conductive vias 174 is formed withoutconductive vias 174 near the center of the group to reduce interferencewith a transmission line connecting semiconductor die 124 to the antennato be formed in region 188. Saw streets 177 illustrate the locationswhere semiconductor die 124 are subsequently singulated through PCBunits 179 to form a final singulated package.

In FIG. 3c , an encapsulant or molding compound 190 is deposited overcarrier 160 including semiconductor die 124, PCB units 170, and PCBunits 179 as an insulating material using a paste printing, compressivemolding, transfer molding, liquid encapsulant molding, vacuumlamination, spin coating, or other suitable applicator. In particular,encapsulant 190 covers the side surfaces and surface 128 ofsemiconductor die 124 and the side surfaces and top surfaces of PCBunits 170 and 179. Encapsulant 190 can be polymer composite material,such as epoxy resin with filler, epoxy acrylate with filler, or polymerwith proper filler. Encapsulant 190 is non-conductive andenvironmentally protects the semiconductor device from external elementsand contaminants. Encapsulant 190 also protects semiconductor die 124from degradation due to exposure to light. Encapsulant 190,semiconductor die 124, and the PCB units 170 and 179 together form areconstituted wafer 192 on carrier 160.

In FIG. 3d , reconstituted wafer 192 is flipped over and bonded on anoptional second carrier 208, similar to carrier 160, with optionalinterface layer 209. An insulating or passivation layer 210 is formedover semiconductor die 124, encapsulant 190, PCB units 170, and PCBunits 179. Insulating layer 210 contains one or more layers of silicondioxide (SiO2), silicon nitride (Si3N4), silicon oxynitride (SiON),tantalum pentoxide (Ta2O5), aluminum oxide (Al2O3), solder resist, othermaterial having similar insulating and structural properties. Insulatinglayer 210 includes a surface opposite semiconductor die 124 that issubstantially flat across reconstituted wafer 192. A portion ofinsulating layer 210 is removed by LDA, etching, or other suitableprocess to expose conductive layer 132 on semiconductor die 124 andconductive vias 174 of the PCB units for subsequent electricalinterconnect.

An electrically conductive layer 212 is formed over insulating layer 210and reconstituted wafer 192 using PVD, CVD, electrolytic plating,electroless plating, or other suitable metal deposition process.Conductive layer 212 contains one or more layers of Al, Cu, Sn, Ni, Au,Ag, or other suitable electrically conductive material. In oneembodiment, conductive layer 212 includes an adhesion or seed layer ofTi/Cu, TiW/Cu, or a coupling agent/Cu. Another metal with good wetetching selectivity, such as Ni, Au, or Ag, is optionally added to theseed layer. The seed layer is deposited by sputtering, electrolessplating, or by depositing laminated Cu foil combined with electrolessplating. Conductive layer 212 is electrically connected to conductivelayer 132 and conductive vias 174 through openings in insulating layer210.

Portions of conductive layer 212 can be electrically common orelectrically isolated depending on the design and function ofsemiconductor die 124. Portions 212A are conductive traces that operateas a redistribution layer (RDL) to fan-out and extend electricalconnection from conductive layer 132 of semiconductor die 124 toconductive vias 174. Conductive traces 212A are used by semiconductordie 124 to transmit and receive digital and analog signals to and fromother devices on PCB 52. The signals travel through conductive vias 174to and from subsequently formed backside interconnects.

Conductive layer 212 includes transmission line 212B coupled to contactpads 132B. Transmission line 212B connects semiconductor die 124 toantenna 212C, which is formed as part of conductive layer 212 andvisible in the plan view of FIG. 3e . Antenna 212C is formed oversurface 198 of reconstituted wafer 192 within a footprint of region 188over PCB units 179. In one embodiment, transmission line 212B is ahalf-wavelength transmission line and antenna 212C is a dipole antennawith two quarter-wavelength sections extending in opposite directionsfrom transmission line 212B. Antenna 212C is used by semiconductor die124 to transmit and receive radar signals.

An insulating or passivation layer 214 is formed over conductive layer212 and insulating layer 210. Insulating layer 214 contains one or morelayers of SiO2, Si3N4, SiON, Ta2O5, Al2O3, or other material havingsimilar insulating and structural properties. Insulating layer 214includes a surface opposite semiconductor die 124 that is substantiallyflat across reconstituted wafer 192. Insulating layer 214 remainscovering conductive layer 212 in the final product for environmentalprotection. Radar signals leaving and returning to antenna 212C travelthrough insulating layer 214 without significant signal loss.

In FIG. 3f , reconstituted wafer 192 is flipped and disposed on anoptional carrier 216 with optional interface layer 218. Encapsulant 190undergoes a back grinding operation with grinder 194 or other suitablemechanical or etching process to reduce a thickness of reconstitutedwafer 192 and expose conductive vias 174 of PCB units 170 and 179. Theback grinding operation leaves new back surface 196 of reconstitutedwafer 192 substantially uniform and planar across the entire width ofthe reconstituted wafer. A portion of encapsulant 190 remains oversemiconductor die 124 after back grinding. In other embodiments, theback grinding operation exposes back surface 128 of semiconductor die124, or removes a portion of the semiconductor die to reduce a thicknessof the semiconductor die.

Reconstituted wafer 192 includes back surface 196 and front surface 198.Back surface 196 includes surfaces of encapsulant 190, core substrate172, and conductive vias 174, which are all approximately coplanar. Insome embodiments, back surface 128 of semiconductor die 124 is exposedand approximately coplanar as part of back surface 196. Front surface198 includes surfaces of encapsulant 190, core substrate 172, andconductive vias 174, as well as active surface 130 of semiconductor die124, which are all approximately coplanar. Conductive vias 174 areexposed at both back surface 196 and front surface 198 as a z-directionvertical interconnect through encapsulant 190.

FIG. 3g illustrates a backside redistribution layer and ground planeformed over back surface 196 of reconstituted wafer 192. An optionalinsulating or dielectric layer 200 is formed over surface 196.Insulating layer 200 contains one or more layers of SiO2, Si3N4, SiON,Ta2O5, Al2O3, or other material having similar insulating and structuralproperties. Insulating layer 200 extends across reconstituted wafer 192.A portion of insulating layer 200 is removed by LDA, etching, or othersuitable process to expose conductive vias 174 for subsequent electricalinterconnect. Insulating layer 200 provides insulating for back surface128 of semiconductor die 124 in embodiments where semiconductor die 124is exposed from encapsulant 190.

An electrically conductive layer 202 is formed over insulating layer 200and reconstituted wafer 192 using PVD, CVD, electrolytic plating,electroless plating, or other suitable metal deposition process.Conductive layer 202 contains one or more layers of Al, Cu, Sn, Ni, Au,Ag, or other suitable electrically conductive material. In oneembodiment, conductive layer 202 includes an adhesion or seed layer ofTi/Cu, TiW/Cu, or a coupling agent/Cu. Another metal with good wetetching selectivity, such as Ni, Au, or Ag, is optionally added to theseed layer. The seed layer is deposited by sputtering, electrolessplating, or by depositing laminated Cu foil combined with electrolessplating. Conductive layer 202 is electrically connected to conductivevias 174 through the openings in insulating layer 200.

Portions of conductive layer 202 can be electrically common orelectrically isolated depending on the design and function ofsemiconductor die 124. In particular, conductive layer 202 includescontact pads and signal traces that form a fan-out or fan-inredistribution layer. Contact pads 202A provide locations for subsequentinterconnect structures to be formed. Conductive traces 202C, visible inthe plan view of FIG. 3i , operate to fan-out and extend electricalconnection from conductive vias 174 across back surface 196. Conductivelayer 202 also includes a ground plane 202B. Ground plane 202B is formedover region 188 within a footprint of PCB unit 179 opposite antenna212C, and operates as a ground plane for the antenna that gives theantenna directionality.

Semiconductor die 124 uses antenna 212C to transmit and receive radarsignals in one embodiment. Radar signals are generated aselectromagnetic radiation from antenna 212C travelling away from groundplane 202B. The radar signals reflect off of remote objects over surface198 and return to antenna 212C. Reflected electromagnetic radiationhitting antenna 212C generates an electric signal back to semiconductordie 124 through transmission line 212B. Semiconductor die 124 measuresthe amount of time between transmitting a radar signal using antenna212C and receiving the reflected signal. The time until a reflectedsignal is received is used by semiconductor die 124 to calculate thedistance of the object over surface 198.

Ground plane 202B was formed over conductive via grouping 182 of PCBunit 179. Grouping 182 of conductive vias 174 are electrically coupledto ground through ground plane 202B. Conductive vias 174 extendperpendicularly between antenna 212C and semiconductor die 124 toprovide additional shielding for the semiconductor die. PCB unit 179 isalso electrically connected to semiconductor die 124 by conductivetraces 212A to provide a ground connection to the semiconductor die.

In FIG. 3h , an insulating or passivation layer 204 is formed overinsulating layer 200 and conductive layer 202. Insulating layer 204contains one or more layers of SiO2, Si3N4, SiON, Ta2O5, Al2O3, or othermaterial having similar insulating and structural properties. Insulatinglayer 204 follows the contour of conductive layer 202. Accordingly,exposed portions of insulating layer 200 and conductive layer 202 arecovered by insulating layer 204. Insulating layer 204 includes a surfaceopposite semiconductor die 124 that is substantially flat or planaracross reconstituted wafer 192. A portion of insulating layer 204 isremoved by LDA, etching, or other suitable process to expose conductivelayer 202 for subsequent electrical interconnect.

An electrically conductive bump material is deposited over conductivelayer 202 using an evaporation, electrolytic plating, electrolessplating, ball drop, or screen printing process. The bump material can beAl, Sn, Ni, Au, Ag, lead (Pb), bismuth (Bi), Cu, solder, andcombinations thereof, with an optional flux solution. For example, thebump material can be eutectic Sn/Pb, high-lead solder, or lead-freesolder. The bump material is bonded to conductive layer 202 using asuitable attachment or bonding process. In one embodiment, the bumpmaterial is reflowed by heating the material above its melting point toform balls or bumps 206. In some applications, bumps 206 are reflowed asecond time to improve electrical contact to conductive layer 202. Inone embodiment, bumps 206 are formed over an under bump metallization(UBM) layer. Bumps 206 can also be compression bonded orthermocompression bonded to conductive layer 202. Bumps 206 representone type of interconnect structure that can be formed over conductivelayer 202. The interconnect structure can also use bond wires,conductive paste, stud bump, micro bump, or other electricalinterconnect.

Bumps 206 provide a ball-grid array connection to PCB 52 or anothersubstrate. Bumps 206A are formed over PCB units 170 and electricallyconnected to a conductive via 174 by contact pad 202A. When mounted to asubstrate, bumps 206A provide connection to active surface 130 ofsemiconductor die 124 through conductive vias 174 and conductive traces212A. Bumps 206B are formed over ground plane 202B. Bumps 206B provide aconnection for ground plane 202B to a ground signal from the underlyingsubstrate. A plurality of bumps 206B are provided in some embodiments toincrease the electrical current capacity to and from ground plane 202B.

FIG. 3i shows back surface 196 of reconstituted wafer 192 withconductive bumps 206 spread out across the reconstituted wafer.Insulating layer 204 is not illustrated, so that conductive layer 202 isvisible. Some bumps 206, labelled as bumps 206A, are disposed directlyover, or within a footprint of, PCB units 170 and 179. Bumps 206A arecoupled to underlying conductive vias 174 by contact pads 202A. Bumps206B are formed directly on and over ground plane 202B. Each groundplane 202B includes six bumps 206B formed on the ground plane, but moreor less bumps per ground plane are used in other embodiments. Bumps 206Care formed away from PCB units 170 and 179, e.g., over semiconductor die124. Bumps 206C are formed on contact pads 202A, which are hidden fromview by the bumps in the illustrated embodiment, and are coupled toconductive vias 174 by conductive traces 202C. Bumps 206C provide afan-in configuration for the ball-grid array. In other embodiments,conductive traces 202C are used to fan-out bumps 206C. Conductive traces202C are electrically connected to conductive vias 174 through openingsof insulating layer 200, similar to contact pads 202A in FIG. 3 h.

In FIG. 3j , reconstituted wafer 192 is singulated through coresubstrates 172 of PCB units 170 and 179 and insulating layers 200, 204,210, and 214 with saw blade or laser cutting tool 220 through sawstreets 176 and 177 to create a plurality of semiconductor packages 230that each includes a radar transceiver die and a self-defined antenna.FIG. 4 shows a transceiver package 230 after singulation. Semiconductordie 124 is coupled to antenna 212C by transmission line 212B.Semiconductor die 124 sends and receives radar signals usingtransmission line 212B and antenna 212C. The signals are directed overactive surface 130 of semiconductor die 124 because ground plane 202Breflects signals in the opposite direction.

The distance between antenna 212C and ground plane 202B is defined orcontrolled by the thickness of PCB units 170 and 179. Differentthicknesses of PCB units are used to change the distance between groundplane 202B and antenna 212C, e.g., based on the intended radar frequencyto be used. In one embodiment where 77 GHz radar signals are transmittedand received, the distance between ground plane 202B and antenna 212C isbetween 0.5 and 0.6 millimeters, and the total height of package 230 isapproximately 0.8 millimeters. For applications at frequencies otherthan 77 GHz, the height of PCB units 170 and 179 are adjustedaccordingly.

Transceiver packages 230 are mounted on PCBs 52 for use. Semiconductordie 124 is coupled to other components on a common or separate PCB 52through conductive traces 212A, conductive vias 174, conductive traces202C, contact pads 202A, and conductive bumps 206. A processor orcontroller communicates with semiconductor die 124 to receiveinformation as to the distance of objects over antenna 212C from theantenna.

In one embodiment, a plurality of transceiver packages 230 are disposedon separate PCBs 52 at various locations on a motor vehicle. Acontroller or processor communicates with the plurality of transceiverpackages 230 to determine whether objects are nearby the vehicle. Whenobjects nearby the motor vehicle pose a potential danger, e.g., a wallor other obstacle in the direction of travel of the first motor vehicle,the controller alerts a driver of the vehicle to beware of the obstacleor automatically applies the vehicle's brakes.

In another embodiment, transceiver packages 230 are used to determine adistance to a second motor vehicle travelling in front of a first motorvehicle that includes transceiver packages 230. The speed of the firstmotor vehicle is controlled based on signals from semiconductor die 124in order to maintain a relatively constant distance between the firstmotor vehicle and the second motor vehicle travelling in front of thefirst motor vehicle. In other embodiments, antenna 212C are used forother purposes besides radar transmission and reception.

FIG. 5 illustrates a plan view of an alternative transceiver packageembodiment. Transceiver package 330 includes PCB units 340 and 342 thatsurround semiconductor die 124, ground plane 350, and antenna 352.Antenna 352 and ground plane 350 are formed on opposite sides of areconstituted wafer similar to transceiver package 230. However,transceiver package 330 lacks a PCB unit between antenna 352 andsemiconductor die 124. On the other hand, antenna 352 and semiconductordie 124 together are surrounded by PCB units 340 and 342 with someconductive vias 174 coupled to a ground reference voltage signal toprovide good shielding from external influences. Transceiver package 330includes conductive traces 360 formed as part of a conductive layer withantenna 352. Conductive traces 360 are similar to conductive traces212C, and couple semiconductor die 124 to conductive vias 174 of PCBunits 340 and 342. Transceiver package 330 includes conductive tracesformed as part of a conductive layer with ground plane 350 to coupleconductive vias 174 of the PCB units to conductive bumps 206 formed onthe bottom of the transceiver packages. Transceiver package 330 includesinsulating layer 214 for environmental protection. Transceiver package330 operates similarly to transceiver package 230, but includes amodified PCB unit layout.

FIG. 6a-6c illustrates an embodiment with an antenna formed on a surfaceof the transceiver package opposite active surface 130 of semiconductordie 124. FIG. 6a illustrates the front side of transceiver package 430,with active surface 130 of semiconductor die 124 facing the viewer. Aground plane 432 is formed over PCB unit 434. Ground plane 432 includesa cutout over PCB unit 434 so that at least two conductive vias 174 ofPCB unit 434 are not covered by the ground plane. Transmission line 436couples contact pads 132 of semiconductor die 124 to conductive vias 174of PCB unit 434. Transmission line 436 and conductive vias 174 couplesignals to be transmitted from semiconductor die 124 to transmissionline 438 on the back side of semiconductor package, i.e., the side ofthe package that back surface 128 of semiconductor die 124 faces.Additional conductive traces formed along with transmission line 436 arenot illustrated, but couple conductive bumps 206 to contact pads 132 ofsemiconductor die 124.

FIG. 6b illustrates the back side of transceiver package 430 with backsurface 128 of semiconductor die 124 facing the viewer. Antenna 440 isformed as a conductive layer over ground plane 432 and coupled toconductive vias 174 of PCB unit 434 by transmission lines 438. Antenna440 is further coupled to contact pads 132 on active surface 130 byconductive vias 174 and transmission line 436. Antenna 440 is formed onan opposite surface of transceiver package 430 as ground plane 432, asin the previous embodiments. However, antenna 440 is formed oppositeactive surface 130 unlike the previously illustrated embodiments.

FIG. 6c illustrates a cross-sectional view of transceiver package 430.Active surface 130 of semiconductor die 124 faces downward towardconductive bumps 206. Ground plane 432 is formed on the bottom surfaceof transceiver package 430. Antenna 440 is formed over the top surfaceof transceiver package 430. Antenna 440 is formed directly oppositeground plane 432. Antenna 440 is coupled to contact pads 132 ofsemiconductor die 124 through transmission line 438, conductive vias174, and transmission line 436. Ground plane 432 extends over conductivevias 174 of PCB unit 434 in another cross-section, and is coupled tocontact pads 132 of semiconductor die 124 through conductive vias 174.Conductive traces 444 and bumps 206A provide interconnection for signalsbetween semiconductor die 124 and an external processor or controller.Bumps 206B provide connection of a ground voltage reference from asubstrate to ground plane 432 and semiconductor die 124. In someembodiments, a plurality of conductive vias 174 surroundingsemiconductor die 124 are coupled to ground through bumps 206B, groundplane 432, and conductive traces 444 to provide shielding forsemiconductor die 124.

FIG. 7 illustrates transceiver package 450 with two metal layers formedover each side of the package. Insulating layer 460 is formed over theback side of semiconductor die 124 in a similar manner to insulatinglayer 200 in FIG. 3g . Openings are formed through insulating layer 460,and conductive layer 462 is formed coupled to conductive vias 174through insulating layer 460 in a similar manner to conductive layer 202in FIG. 3g . Conductive layer 462 includes a ground plane 462B, as wellas contact pads and conductive traces to fan-out or fan-ininterconnection from conductive vias 174. Insulating layer 464 is formedover insulating layer 460 and conductive layer 462. Openings are formedin insulating layer 464 over conductive layer 462. Conductive layer 466is formed over conductive layer 462 and insulating layer 464, andcontacts conductive layer 462 through the openings in insulating layer464. Insulating layer 468 is formed over conductive layer 466. Openingsare formed in insulating layer 468, and conductive bumps 206 are formedon conductive layer 466 through the openings in insulating layer 468.Transceiver package 450 includes two metal layers over back surface 128of semiconductor die 124. Having multiple metal layers allowsimplementation of additional electrical functions. A ground plane forthe radar antenna of transceiver package 450 may be formed as part ofthe first metal layer 462, second metal layer 466, or in additionalmetal layers when more than two metal layers are used.

Transceiver package 450 includes insulating layers 480, 484, and 488 andconductive layers 482 and 486 formed over the front side of thereconstituted wafer in a similar manner to insulating layers 460, 464,and 468 and conductive layers 562 and 466. Conductive layer 482 includesconductive traces and contact pads to fan-out interconnection fromsemiconductor die 124 to conductive vias 174. Conductive layer 486includes an antenna 486A, similar to antennae 212C, 352, and 440.Antenna 486A is formed over ground plane 462B on an opposite side oftransceiver package 450. Conductive traces 486B are also formed as apart of conductive layer 486 to fan-out interconnection fromsemiconductor die 124. An antenna for transceiver package 450 can beformed as part of the first metal layer 482 or second metal layer 486,or another metal layer when more than two metal layers are used.

Any desired number of additional metal layers may be formed over eitherside of semiconductor die 124. The number of metal layers over backsurface 128 need not be the same as the number of metal layers overactive surface 130. Adding additional layers allows more complicatedfan-out routing and other electrical features that are challenging withonly a single metal layer. Additional metal layers may be added oneither side of any of the previously discussed embodiments to increasethe functionality of the embodiments.

FIGS. 8a-8i illustrate using a dummy or sacrificial die to form abackside RDL for a radar transceiver package. In FIG. 8a , a dummysemiconductor die 500 is provided including an inverted RDL 502 formedover the dummy die. Semiconductor die 500 is similar to semiconductordie 124, but does not typically include active circuits formed in anactive surface. In one embodiment, RDL 502 is formed while dummy die 500remains part of a larger semiconductor wafer. In other embodiments, aglass wafer, PCB, or mold interconnect substrate is used instead ofsemiconductor material for dummy die 500.

Insulating layer 504 is formed over 500. In some embodiments, insulatinglayer 504 operates as an etch-stop layer for removing die 500 in asubsequent processing step. Contact pads 506 are formed over insulatinglayer 504 and within insulating layer 508. An RDL layer 510 is formedover contact pads 506 and insulating layer 508. A passivation layer 512is formed over RDL layer 510.

In FIG. 8b , semiconductor die 124 is disposed on carrier 520 withactive surface 130 oriented toward the carrier. An optional interfacelayer 522 is disposed between carrier 520 and semiconductor die 124.Dummy die 500 is disposed over semiconductor die 124 with RDL 502oriented toward semiconductor die 124. A permanent adhesive layer 526 isdeposited on semiconductor die 124 to bond RDL 502 to back surface 128.In some embodiments, both semiconductor die 124 and dummy die 500 aredisposed on carrier 520 in wafer form, and then singulated after bondingwith adhesive 526 to create individual die units 528. In otherembodiments, singulated dummy die 500 are disposed on semiconductor die124, which remains as wafer 120.

In FIG. 8c , PCB units 530 and 540 are disposed on carrier 520 betweenadjacent die units 528. In other embodiments, die units 528 from FIG. 8bare singulated and disposed on a separate carrier along with PCB units530 and 540. PCB unit 530 includes core substrate 172 and conductivevias 174, as with PCB units 170. In addition, PCB units 530 includecontact pads 532 and passivation layers 534 formed over the surfaces ofcore substrate 172. PCB unit 540 includes core substrate 172 with groundplane 542 on a first surface of the PCB unit. Passivation layer 544 isformed over ground plane 542. PCB unit 540 further includes contact pad546, transmission line 547, and antenna 548 formed over a surface ofcore substrate 172 opposite ground plane 542. Antenna 548 is similar toantenna 212C. PCB unit 540 includes separate ground planes 542 andantennae 548 on opposite sides of saw street 176, each associated with adifferent semiconductor die 124 on opposite sides of PCB unit 540. Insome embodiments, PCB units 530 are disposed on three sides of eachsemiconductor die 124, and a PCB unit 540 is placed on one side of eachsemiconductor die and shared by two adjacent semiconductor die.

In FIG. 8d , an encapsulant or molding compound 550 is deposited overcarrier 520 including die units 528, PCB units 530, and PCB units 540 asan insulating material using a paste printing, compressive molding,transfer molding, liquid encapsulant molding, vacuum lamination, spincoating, or other suitable applicator. Encapsulant 550 fully coversdummy die 500 in one embodiment.

In FIG. 8e , the reconstituted wafer including die units 528, PCB units530, and PCB units 540 is flipped and disposed on carrier 552 withoptional interface layer 554. A dielectric layer 560 is formed overactive surface 130 of semiconductor die 124 and PCB units 530 and 540. Aconductive layer 562 is disposed on dielectric layer 560 and coupled tocontact pads of PCB unit 530, PCB unit 540, and semiconductor die 124through openings of dielectric layer 560. Conductive layer 562 ispatterned to form a fan-out pattern from contact pads 132 ofsemiconductor die 124 to antenna 548 of PCB unit 530 and conductive vias174 of PCB units 540. A passivation layer 564 is formed over dielectriclayer 560 and conductive layer 562 for electrical isolation andenvironmental protection.

In FIG. 8f , the reconstituted wafer is flipped and placed on optionalbackgrinding tape 568. A backgrinding operation is performed withbackgrinding tool 570 to remove dummy die 500 and expose contact pads ofPCB unit 530, PCB unit 540, and RDL 502. Contact pads 132, contact pads532, and ground plane 542 are all approximately the same distance frombackgrinding tape 568 so that all contact pads are exposed at a similarbackgrinding depth. A cleaning process is performed after backgrindingto remove surface metal residue and copper oxidation. In someembodiments, carrier 552 is removed prior to backgrinding by, e.g., athermal or UV release. In FIG. 8g , conductive bumps 572 are formed oncontact pads 132, contact pads 532, and ground plane 546. Conductivebumps 572 are similar to conductive bumps 206. In some embodiments, thereconstituted wafer is disposed on an optional thermal support tapeduring the bumping process, and an optional clamping chuck may be used.

In FIG. 8h , semiconductor die 124 are singulated through PCB units 530and 540 to separate the semiconductor die into separate transceiverpackages 580. Each package 580 includes an antenna 548 and ground plane542 formed on opposite sides of the package.

In FIG. 8i , a transceiver package 580 is disposed onto PCB, mothercircuit board, or other substrate 590. Substrate 590 includes contactpads 594 and conductive traces 592. Conductive bumps 572 are reflowed tometallurgically and electrically couple package 580 to substrate 590.Conductive traces 592 electrically couple semiconductor die 124 to othercircuit components disposed on substrate 590 through conductive layer562 and conductive vias 174. Package 580 includes a self-defined antennawith the distance between antenna 548 and ground plane 542 defined bythe thickness of PCB units 530 and 540.

While one or more embodiments of the present invention have beenillustrated in detail, the skilled artisan will appreciate thatmodifications and adaptations to those embodiments may be made withoutdeparting from the scope of the present invention as set forth in thefollowing claims.

What is claimed:
 1. A method of making a semiconductor device,comprising: providing a substrate; forming an antenna over thesubstrate; forming a ground plane over the substrate opposite theantenna; disposing a semiconductor die adjacent to the substrate;providing a dummy die; forming a conductive layer on the dummy die;disposing the dummy die over the semiconductor die; depositing anencapsulant over the substrate and the semiconductor die after disposingthe dummy die over the semiconductor die; and removing the dummy die bybackgrinding the dummy die and the encapsulant.
 2. The method of claim1, further including forming a conductive layer to electrically couplethe antenna to the semiconductor die.
 3. The method of claim 1, furtherincluding forming the ground plane and the antenna over the substrateprior to depositing the encapsulant.
 4. The method of claim 1, furtherincluding forming a conductive bump on the ground plane.
 5. The methodof claim 1, wherein the substrate includes a conductive via between theantenna and semiconductor die.
 6. A method of making a semiconductordevice, comprising: forming a reconstituted wafer; forming an antennaover the reconstituted wafer; and forming a ground plane over thereconstituted wafer opposite the antenna.
 7. The method of claim 6,further including forming the reconstituted wafer to include asemiconductor die and a PCB unit.
 8. The method of claim 7, furtherincluding forming the ground plane over the PCB unit.
 9. The method ofclaim 8, further including coupling the antenna to the semiconductor diethrough the PCB unit.
 10. The method of claim 7, further includingforming the antenna between the PCB unit and the semiconductor die. 11.The method of claim 6, further including: forming a first redistributionlayer including the antenna over a first surface of the reconstitutedwafer; and forming a second redistribution layer including the groundplane over a second surface of the reconstituted wafer.
 12. Asemiconductor device, comprising: a reconstituted wafer; a firstconductive layer including an antenna formed over a first surface of thereconstituted wafer; and a second conductive layer including a groundplane formed over a second surface of the reconstituted wafer.
 13. Thesemiconductor device of claim 12, further including a conductive viaextending through the reconstituted wafer.
 14. The semiconductor deviceof claim 13, wherein the antenna is electrically coupled to theconductive via.
 15. The semiconductor device of claim 13, wherein theconductive via is over the ground plane.
 16. The semiconductor device ofclaim 15, further including a semiconductor die in the reconstitutedwafer, wherein the conductive via is disposed between the semiconductordie and antenna.
 17. The semiconductor device of claim 13, wherein thefirst conductive layer or the second conductive layer includes aconductive trace.
 18. The semiconductor device of claim 13, furtherincluding a conductive bump disposed on the ground plane.
 19. Asemiconductor device, comprising: a reconstituted wafer; an antennaformed over the reconstituted wafer; and a ground plane formed over thereconstituted wafer opposite the antenna.
 20. The semiconductor deviceof claim 19, wherein the reconstituted wafer includes a PCB unit. 21.The semiconductor device of claim 20, wherein the antenna is coupled tothe PCB unit.
 22. The semiconductor device of claim 20, wherein the PCBunit is disposed over the ground plane.
 23. The semiconductor device ofclaim 19, wherein the antenna is part of a redistribution layer.